Shinhyun+Choi
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KAIST Develops Robots That React to Danger Like Humans
<(From left) Ph.D candidate See-On Park, Professor Jongwon Lee, and Professor Shinhyun Choi>
In the midst of the co-development of artificial intelligence and robotic advancements, developing technologies that enable robots to efficiently perceive and respond to their surroundings like humans has become a crucial task. In this context, Korean researchers are gaining attention for newly implementing an artificial sensory nervous system that mimics the sensory nervous system of living organisms without the need for separate complex software or circuitry. This breakthrough technology is expected to be applied in fields such as in ultra-small robots and robotic prosthetics, where intelligent and energy-efficient responses to external stimuli are essential.
KAIST (President Kwang Hyung Lee) announced on July15th that a joint research team led by Endowed Chair Professor Shinhyun Choi of the School of Electrical Engineering at KAIST and Professor Jongwon Lee of the Department of Semiconductor Convergence at Chungnam National University (President Jung Kyum Kim) developed a next-generation neuromorphic semiconductor-based artificial sensory nervous system. This system mimics the functions of a living organism's sensory nervous system, and enables a new type of robotic system that can efficiently responds to external stimuli.
In nature, animals — including humans — ignore safe or familiar stimuli and selectively react sensitively to important or dangerous ones. This selective response helps prevent unnecessary energy consumption while maintaining rapid awareness of critical signals. For instance, the sound of an air conditioner or the feel of clothing against the skin soon become familiar and are disregarded. However, if someone calls your name or a sharp object touches your skin, a rapid focus and response occur. These behaviors are regulated by the 'habituation' and 'sensitization' functions in the sensory nervous system. Attempts have been consistently made to apply these sensory nervous system functions of living organisms in order to create robots that efficiently respond to external environments like humans.
However, implementing complex neural characteristics such as habituation and sensitization in robots has faced difficulties in miniaturization and energy efficiency due to the need for separate software or complex circuitry. In particular, there have been attempts to utilize memristors, a neuromorphic semiconductor. A memristor is a next-generation electrical device, which has been widely utilized as an artificial synapse due to its ability to store analog value in the form of device resistance. However, existing memristors had limitations in mimicking the complex characteristics of the nervous system because they only allowed simple monotonic changes in conductivity.
To overcome these limitations, the research team developed a new memristor capable of reproducing complex neural response patterns such as habituation and sensitization within a single device. By introducing additional layer inside the memristor that alter conductivity in opposite directions, the device can more realistically emulate the dynamic synaptic behaviors of a real nervous system — for example, decreasing its response to repeated safe stimuli but quickly regaining sensitivity when a danger signal is detected.
<New memristor mimicking functions of sensory nervous system such as habituation/sensitization>
Using this new memristor, the research team built an artificial sensory nervous system capable of recognizing touch and pain, an applied it to a robotic hand to test its performance. When safe tactile stimuli were repeatedly applied, the robot hand, which initially reacted sensitively to unfamiliar tactile stimuli, gradually showed habituation characteristics by ignoring the stimuli. Later, when stimuli were applied along with an electric shock, it recognized this as a danger signal and showed sensitization characteristics by reacting sensitively again. Through this, it was experimentally proven that robots can efficiently respond to stimuli like humans without separate complex software or processors, verifying the possibility of developing energy-efficient neuro-inspired robots.
<Robot arm with memristor-based artificial sensory nervous system>
See-On Park, researcher at KAIST, stated, "By mimicking the human sensory nervous system with next-generation semiconductors, we have opened up the possibility of implementing a new concept of robots that are smarter and more energy-efficient in responding to external environments." He added, "This technology is expected to be utilized in various fusion fields of next-generation semiconductors and robotics, such as ultra-small robots, military robots, and medical robots like robotic prosthetics".
This research was published online on July 1st in the international journal 'Nature Communications,' with Ph.D candidate See-On Park as the first author.
Paper Title: Experimental demonstration of third-order memristor-based artificial sensory nervous system for neuro-inspired robotics
DOI: https://doi.org/10.1038/s41467-025-60818-x
This research was supported by the Korea National Research Foundation's Next-Generation Intelligent Semiconductor Technology Development Project, the Mid-Career Researcher Program, the PIM Artificial Intelligence Semiconductor Core Technology Development Project, the Excellent New Researcher Program, and the Nano Convergence Technology Division, National Nanofab Center's (NNFC) Nano-Medical Device Project.
2025.07.16 View 115 -
KAIST Develops Neuromorphic Semiconductor Chip that Learns and Corrects Itself
< Photo. The research team of the School of Electrical Engineering posed by the newly deveoped processor. (From center to the right) Professor Young-Gyu Yoon, Integrated Master's and Doctoral Program Students Seungjae Han and Hakcheon Jeong and Professor Shinhyun Choi >
- Professor Shinhyun Choi and Professor Young-Gyu Yoon’s Joint Research Team from the School of Electrical Engineering developed a computing chip that can learn, correct errors, and process AI tasks
- Equipping a computing chip with high-reliability memristor devices with self-error correction functions for real-time learning and image processing
Existing computer systems have separate data processing and storage devices, making them inefficient for processing complex data like AI. A KAIST research team has developed a memristor-based integrated system similar to the way our brain processes information. It is now ready for application in various devices including smart security cameras, allowing them to recognize suspicious activity immediately without having to rely on remote cloud servers, and medical devices with which it can help analyze health data in real time.
KAIST (President Kwang Hyung Lee) announced on the 17th of January that the joint research team of Professor Shinhyun Choi and Professor Young-Gyu Yoon of the School of Electrical Engineering has developed a next-generation neuromorphic semiconductor-based ultra-small computing chip that can learn and correct errors on its own.
< Figure 1. Scanning electron microscope (SEM) image of a computing chip equipped with a highly reliable selector-less 32×32 memristor crossbar array (left). Hardware system developed for real-time artificial intelligence implementation (right). >
What is special about this computing chip is that it can learn and correct errors that occur due to non-ideal characteristics that were difficult to solve in existing neuromorphic devices. For example, when processing a video stream, the chip learns to automatically separate a moving object from the background, and it becomes better at this task over time.
This self-learning ability has been proven by achieving accuracy comparable to ideal computer simulations in real-time image processing. The research team's main achievement is that it has completed a system that is both reliable and practical, beyond the development of brain-like components.
The research team has developed the world's first memristor-based integrated system that can adapt to immediate environmental changes, and has presented an innovative solution that overcomes the limitations of existing technology.
< Figure 2. Background and foreground separation results of an image containing non-ideal characteristics of memristor devices (left). Real-time image separation results through on-device learning using the memristor computing chip developed by our research team (right). >
At the heart of this innovation is a next-generation semiconductor device called a memristor*. The variable resistance characteristics of this device can replace the role of synapses in neural networks, and by utilizing it, data storage and computation can be performed simultaneously, just like our brain cells.
*Memristor: A compound word of memory and resistor, next-generation electrical device whose resistance value is determined by the amount and direction of charge that has flowed between the two terminals in the past.
The research team designed a highly reliable memristor that can precisely control resistance changes and developed an efficient system that excludes complex compensation processes through self-learning. This study is significant in that it experimentally verified the commercialization possibility of a next-generation neuromorphic semiconductor-based integrated system that supports real-time learning and inference.
This technology will revolutionize the way artificial intelligence is used in everyday devices, allowing AI tasks to be processed locally without relying on remote cloud servers, making them faster, more privacy-protected, and more energy-efficient.
“This system is like a smart workspace where everything is within arm’s reach instead of having to go back and forth between desks and file cabinets,” explained KAIST researchers Hakcheon Jeong and Seungjae Han, who led the development of this technology. “This is similar to the way our brain processes information, where everything is processed efficiently at once at one spot.”
The research was conducted with Hakcheon Jeong and Seungjae Han, the students of Integrated Master's and Doctoral Program at KAIST School of Electrical Engineering being the co-first authors, the results of which was published online in the international academic journal, Nature Electronics, on January 8, 2025.
*Paper title: Self-supervised video processing with self-calibration on an analogue computing platform based on a selector-less memristor array ( https://doi.org/10.1038/s41928-024-01318-6 )
This research was supported by the Next-Generation Intelligent Semiconductor Technology Development Project, Excellent New Researcher Project and PIM AI Semiconductor Core Technology Development Project of the National Research Foundation of Korea, and the Electronics and Telecommunications Research Institute Research and Development Support Project of the Institute of Information & communications Technology Planning & Evaluation.
2025.01.17 View 9011 -
KAIST researchers developed a novel ultra-low power memory for neuromorphic computing
A team of Korean researchers is making headlines by developing a new memory device that can be used to replace existing memory or used in implementing neuromorphic computing for next-generation artificial intelligence hardware for its low processing costs and its ultra-low power consumption.
KAIST (President Kwang-Hyung Lee) announced on April 4th that Professor Shinhyun Choi's research team in the School of Electrical Engineering has developed a next-generation phase change memory* device featuring ultra-low-power consumption that can replace DRAM and NAND flash memory.
☞ Phase change memory: A memory device that stores and/or processes information by changing the crystalline states of materials to be amorphous or crystalline using heat, thereby changing its resistance state.
Existing phase change memory has the problems such as expensive fabrication process for making highly scaled device and requiring substantial amount of power for operation. To solve these problems, Professor Choi’s research team developed an ultra-low power phase change memory device by electrically forming a very small nanometer (nm) scale phase changeable filament without expensive fabrication processes. This new development has the groundbreaking advantage of not only having a very low processing cost but also of enabling operating with ultra-low power consumption.
DRAM, one of the most popularly used memory, is very fast, but has volatile characteristics in which data disappears when the power is turned off. NAND flash memory, a storage device, has relatively slow read/write speeds, but it has non-volatile characteristic that enables it to preserve the data even when the power is cut off.
Phase change memory, on the other hand, combines the advantages of both DRAM and NAND flash memory, offering high speed and non-volatile characteristics. For this reason, phase change memory is being highlighted as the next-generation memory that can replace existing memory, and is being actively researched as a memory technology or neuromorphic computing technology that mimics the human brain.
However, conventional phase change memory devices require a substantial amount of power to operate, making it difficult to make practical large-capacity memory products or realize a neuromorphic computing system. In order to maximize the thermal efficiency for memory device operation, previous research efforts focused on reducing the power consumption by shrinking the physical size of the device through the use of the state-of-the-art lithography technologies, but they were met with limitations in terms of practicality as the degree of improvement in power consumption was minimal whereas the cost and the difficulty of fabrication increased with each improvement.
In order to solve the power consumption problem of phase change memory, Professor Shinhyun Choi’s research team created a method to electrically form phase change materials in extremely small area, successfully implementing an ultra-low-power phase change memory device that consumes 15 times less power than a conventional phase change memory device fabricated with the expensive lithography tool.
< Figure 1. Illustrations of the ultra-low power phase change memory device developed through this study and the comparison of power consumption by the newly developed phase change memory device compared to conventional phase change memory devices. >
Professor Shinhyun Choi expressed strong confidence in how this research will span out in the future in the new field of research saying, "The phase change memory device we have developed is significant as it offers a novel approach to solve the lingering problems in producing a memory device at a greatly improved manufacturing cost and energy efficiency. We expect the results of our study to become the foundation of future electronic engineering, enabling various applications including high-density three-dimensional vertical memory and neuromorphic computing systems as it opened up the possibilities to choose from a variety of materials.” He went on to add, “I would like to thank the National Research Foundation of Korea and the National NanoFab Center for supporting this research.”
This study, in which See-On Park, a student of MS-PhD Integrated Program, and Seokman Hong, a doctoral student of the School of Electrical Engineering at KAIST, participated as first authors, was published on April 4 in the April issue of the renowned international academic journal Nature. (Paper title: Phase-Change Memory via a Phase-Changeable Self-Confined Nano-Filament)
This research was conducted with support from the Next-Generation Intelligent Semiconductor Technology Development Project, PIM AI Semiconductor Core Technology Development (Device) Project, Excellent Emerging Research Program of the National Research Foundation of Korea, and the Semiconductor Process-based Nanomedical Devices Development Project of the National NanoFab Center.
2024.04.04 View 9493 -
Professor Shinhyun Choi’s team, selected for Nature Communications Editors’ highlight
[ From left, Ph.D. candidates See-On Park and Hakcheon Jeong, along with Master's student Jong-Yong Park and Professor Shinhyun Choi ]
See-On Park, Hakcheon Jeong, Jong-Yong Park - a team of researchers under the leadership of Professor Shinhyun Choi of the School of Electrical Engineering, developed a highly reliable variable resistor (memristor) array that simulates the behavior of neurons using a metal oxide layer with an oxygen concentration gradient, and published their work in Nature Communications. The study was selected as the Nature Communications' Editor's highlight, and as the featured article posted on the main page of the journal's website.
Link : https://www.nature.com/ncomms/
[ Figure 1. The featured image on the main page of the Nature Communications' website introducing the research by Professor Choi's team on the memristor for artificial neurons ]
Thesis title: Experimental demonstration of highly reliable dynamic memristor for artificial neuron and neuromorphic computing.
( https://doi.org/10.1038/s41467-022-30539-6 )
At KAIST, their research was introduced on the 2022 Fall issue of Breakthroughs, the biannual newsletter published by KAIST College of Engineering.
This research was conducted with the support from the Samsung Research Funding & Incubation Center of Samsung Electronics.
2022.11.01 View 11065